Strain Induced Electronic Property Modulation in Indium Phosphide A First Principles Study | #sciencefather #researchaward
Bandgap Engineering via Lattice Distortion: First-Principles Analysis of Indium Phosphide In the pursuit of higher-performance optoelectronics and high-speed logic devices, Indium Phosphide (InP) remains a cornerstone material. As a direct bandgap III-V semiconductor, InP is prized for its high electron mobility and its ideal bandgap for fiber-optic communications. However, to push these devices toward their theoretical limits, researchers are increasingly turning to strain engineering . By intentionally introducing lattice distortions, the electronic landscape of InP can be precisely modulated. This technical overview examines the first-principles approach to understanding how strain-induced changes—both uniaxial and biaxial—reconfigure the band structure and carrier dynamics of InP. The First-Principles Framework: DFT and InP Predicting the electronic response of InP under mechanical load requires a quantum-mechanical treatment of the electron-ion system. Most modern studies u...