Impact of Gate Oxide Thickness on AC Bias Temperature Instability in SiC MOSFETs
๐️ Robustness in Power Electronics: Decoding Gate Oxide Thickness and AC BTI in SiC MOSFETs Silicon Carbide (SiC) MOSFETs have revolutionized power conversion, offering high-temperature operation and superior switching speeds compared to traditional Silicon (Si). However, for researchers and technicians, the long-term reliability of the gate oxide ( $SiO_2$ ) remains a primary concern. Specifically, Bias Temperature Instability (BTI) under AC stress represents a critical failure mechanism that determines the operational lifespan of these devices in high-frequency applications. ๐ฐ️⚡ The thickness of the gate oxide ( $t_{ox}$ ) is not just a geometric parameter; it is the fundamental determinant of the electric field intensity and the resulting degradation kinetics. ๐ The BTI Bottleneck: PBTI vs. NBTI In SiC MOSFETs, BTI manifests as a shift in the threshold voltage ( $V_{th}$ ) when a bias is applied at elevated temperatures. Under AC conditions—typical for real-world switching...